Harnessing the Second-Order Metal−Insulator Transition for Neuromorphic Computing
Vanadium oxides are widely studied phase change materials for brain-inspired computing architectures. Systems like VO2 and V2O3 exhibit first-order metal−insulator transitions (MITs) with hysteresis and percolative switching, increasing stochasticity and device variability. Here, we focus on the less explored Magnéli phase V4O7, which undergoes a continuous, non-hysteretic, second-order MIT. This surprisingly enables highly reproducible volatile resistive switching in spiking-neuron-type devices. We synthesize V4O7 films, characterize their structural and transport properties, and demonstrate voltage and current-driven threshold switching with electrothermal feedback. In a Pearson–Anson oscillator, V4O7 devices produce stable, tunable spiking across 20–200 kHz, with consistent operation among multiple devices. Wemore »